Shenzhen, April 10, 2026 — At the 800VDC Data Center Energy Transformation · Energy Storage & Wide Bandgap Semiconductor Synergy Forum, Nick Schneider, Head of R&D at SwissSEM China, delivered a keynote presentation titled “2300V SiC MOSFET Technology Solution for Solid-State Transformers”, officially unveiling a 2300V silicon carbide power device solution designed for next-generation data center power systems.
Industry Background: AI Computing Growth Driving Data Center Power Architecture Transformation
With the rapid development of artificial intelligence technology, global data center computing demand is showing exponential growth. According to industry statistics, AI computing power doubles every six months, and the accompanying energy consumption issue has become a key bottleneck restricting the sustainable development of data centers. Traditional data centers adopt a 400V AC power distribution architecture, relying on low-frequency transformers to achieve voltage conversion. This approach has inherent drawbacks such as high system losses, large equipment size, and low power density, making it difficult to meet the explosive power supply demand of GPU clusters.
Against this background, the 800V DC power distribution architecture, with higher transmission efficiency, simplified system topology, and better power density, is gradually becoming the mainstream direction for upgrading data center energy systems. The Solid-State Transformer (SST), as the core equipment for achieving efficient conversion from medium-voltage AC to low-voltage DC, can complete energy conversion without traditional low-frequency transformers, significantly improving system flexibility, scalability, and overall energy efficiency.
Technical Solution: 2300V SiC MOSFET Empowering Solid-State Transformers
Based on the mature m23 technology platform, SwissSEM China has developed a 2300V SiC MOSFET device suitable for solid-state transformer applications. This voltage level achieves an optimal balance between technical performance and system cost: compared with 1200V devices, 2300V devices support two-level topology structures, reducing the number of subsystems and system complexity by 50%; compared with higher voltage devices (such as 6.5kV), they have significant advantages in cost, conduction losses, and commercial maturity.
Key Performance Parameters
The SwissSEM 2300V SiC MOSFET features excellent static and dynamic characteristics. At a junction temperature of 150°C, the on-resistance RDS(on) is only 45 mΩ, and switching losses are controlled at an industry-leading level, fully meeting the requirements of high-frequency and high-power-density solid-state transformer applications.
Product Series: Diverse Packaging Options to Meet System-Level Requirements
To address different application scenarios and topology requirements, SwissSEM China provides multiple packaging options such as FP type (Easy 2B/3B) and XP type, supporting various topologies including single-switch, H-bridge, and phase-leg configurations. The product voltage range covers 650V to 3300V, and customized high isolation voltage (Viso) solutions are available to fully meet the stringent requirements for heatsink and insulation design in multi-level series-connected systems.
Summary and Outlook
Nick Schneider stated in his concluding remarks:
“The 2300V SiC MOSFET represents the best balance between cost and performance for solid-state transformer applications. Combined with innovative packaging technology and system integration capabilities, we will accelerate the commercialization of next-generation efficient, compact, and low-cost solid-state transformer technologies.”
SwissSEM China will continue to deepen its efforts in third-generation semiconductor power devices, leveraging leading silicon carbide technology to promote data center energy systems toward higher efficiency and higher power density, and providing core device support for the green and sustainable development of global digital infrastructure.
