Recently, Sun.King Pacific Semiconductors Technology (Zhejiang) Co., Ltd. (SwissSEM) has launched the new i23‑series 1200V 1000A/1100A IGBT modules. Adopting the proven ED package, the i23 chips built with ultra‑fine trench‑gate technology deliver extremely low total switching losses (Eon+Eoff). The 1200V/1000A variant uses reinforced Si₃N₄ insulated direct‑bonded copper (DBC) substrate to effectively boost the module’s current‑carrying capability. Building upon this foundation, the 1200V/1100A model is equipped with an additional Pin‑Fin cooling baseplate to further cut thermal resistance and upgrade current rating, bringing brand‑new solutions for high‑power, high‑power‑density and high‑reliability applications in photovoltaics, energy storage and commercial vehicles.

Part Numbers

■ SISD1000ED120i23

■ SISD1100ED120i23P

Product Features

■ i23 ultra‑low‑loss fine trench‑gate IGBT chipset

■ Reinforced Si₃N₄ insulated direct‑bonded copper (DBC) substrate

■ Low‑thermal‑resistance copper baseplate

■ Industry‑standard package with low internal impedance

■ Pin‑Fin cooling baseplate for minimized thermal resistance

■ Optional press‑fit signal pins

Applications

■ PV inverters

■ Energy‑storage PCS (Power Conversion System)

■ Commercial vehicles

■ Frequency converters

■ Welding machines

■ UPS (Uninterruptible Power Supply)

The 1200V 1000A/1100A ED‑package IGBT modules are now in mass production. Customers are welcome to visit SwissSEM’s official website https://www.swiss‑sem.com/ for full specifications and sample requests.