Recently, Sun.King Pacific Semiconductors Technology (Zhejiang) Co., Ltd. (SwissSEM) has launched its new 1200V 1000A half-bridge IGBT module in ST package. Adopting a proven half-bridge topology with ST package, the module features a high rated current of 1000A, which greatly simplifies system design while improving reliability and integration level. Its superior performance delivers attractive system-level cost performance for customers. The module’s maximum operating junction temperature reaches 175°C. Combined with excellent thermal cycling capability, its power density is substantially enhanced. Built on the brand-new i23 fine trench-gate IGBT chipset, the module achieves ultra-high current density, ultra-low losses and outstanding reliability.
Part Number
SISD01000ST120i23_A01
Product Features
■ i23 ultra-low-loss fine trench-gate IGBT chipset
■ High-efficiency Al₂O₃ insulating ceramic substrate
■ High creepage distance and clearance
■ Low thermal resistance copper baseplate
■ Industry-standard package
Competitive Advantages
■ Domestic IGBT and diode chipset optimized based on years of power semiconductor R&D experience
■ High robustness and short-circuit withstand capability for improved system safety
■ Optimized switching characteristics to reduce power consumption in high-frequency applications
■ Enables high power density output, suitable for compact equipment design
■ Traceable quality control management
Applications
■ Photovoltaics
■ Energy Storage PCS
■ Motor control
■ Commercial vehicles
■ UPS
The 1200V 1000A half-bridge IGBT module in ST package is now in mass production. Customers are welcome to visit SwissSEM’s official website https://www.swiss-sem.com/ for full details and sample requests.
