At the PCIM Asia 2024 exhibition held on August 28, SwissSEM, a subsidiary of SUN.KING Technology, officially released the 1200V/13mΩ SiC MOSFET chip, and a chip expert gave a live report on the industry-leading 1.2kV SiC with high-temperature on-resistance MOSFET for compact inverters in electric vehicles.

Sun.King Technology SiC MOSFET Chip

<p style="box-sizing: border-box; margin-top: 0px; margin-bottom: 0px; padding: 0px; color: rgb(102, Silicon carbide (SiC) has the characteristics of high breakdown electric field, high saturable electron velocity, high thermal conductivity, high electron density and high mobility. It is a good semiconductor material and is widely used in new energy vehicles, photovoltaic inverters, power storage, server power supplies, industrial power frequency conversion, smart grid, rail transportation and other fields. Especially in the field of new energy vehicles, silicon carbide (SiC) power devices help to achieve lightweight and efficient power electronic drive systems for new energy vehicles, and will play a more important role in key electronic control components such as the main drive inverter of new energy vehicles. As the global acceptance of electric vehicles gradually increases, silicon carbide (SiC) will usher in new growth opportunities in the next decade.

The SiC MOSFET chip released by SUN.KING Technology this time adopts a number of industry-leading special designs and processes, including:

-- The distance from the chip edge to the metal layer is only about 100 microns;       -- The cell spacing is reduced to a minimum of 5.0 microns;

-- Short channel design for optimal performance;                -- Current diffusion injection between cells;

-- Gate metal layout continuously surrounds the chip;      -- Polysilicon gate runner in the active area;

-- Continuous aluminum-copper source pad.

Due to excellent design and technology, our SiC MOSFET chips exhibit excellent static and dynamic characteristics under high temperature working conditions, and have reached the industry's first-class level of 1200V/13mΩ.

In addition, using this SiC MOSFET chip, SUN.KING Technology has also launched multiple models of automotive-grade, high-performance HEEV packaged and EVD packaged SiC modules. HEEV packaged and EVD packaged SiC modules adopt industry-leading design and packaging technology, with excellent heat dissipation performance, excellent reliability and robustness, and can cover the mainstream electric vehicle application needs from 100KW to 300KW, especially compact inverters for electric vehicles.

The SUN.KING i20 IGBT chip, ED packaged IGBT module, ST packaged IGBT module, BEVD packaged IGBT module, EP packaged IGBT module, HEEV packaged SiC module, EVD packaged SiC module products exhibited at the same time received high attention and enthusiastic response from the participants, and attracted the enthusiastic attention and in-depth exchanges of many participants and guests on site.

Powerful "core" power, empowering the "core" future, at PCIM Asia 2024, where global giants are everywhere, SUN.KING independently developed IGBT, SiC chips and modules and other products, and won unanimous recognition and high praise from domestic and foreign industry experts and customers with its world-class technical level and excellent performance.