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The i23 series chip set adopts advanced micro-pattern trench IGBT technology, delivering lower saturation voltage (V<sub>CE(sat)</sub>), higher current density, and reduced switching losses. These chips meet the industry's highest standards for reliability. The d23 series chips feature lower forward voltage drop and reduced reverse recovery losses. When used in combination, the i23 and d23 chips significantly enhance module performance while ensuring long-term reliability.
· Advanced micro-pattern trench IGBT technology for ultra-low switching losses (Eon+ Eoff)
· Rated current up to 300A, supporting both 1200V and 1700V voltage classes
· Soft turn-off controllability across a wide Rg range for versatile application scenarios
· High short-circuit withstand capability (ISC)
· Positive temperature coefficient
· Excellent current sharing characteristics, enabling easy parallel connection of multiple devices
· 1200V version: advanced emitter efficiency design
· 1700V version: quasi-local lifetime control (QLC) design
· Ultra-low forward voltage drop (Vf) and low reverse recovery loss (Erec) while maintaining soft recovery characteristics
· Positive temperature coefficient
· Optimized matching with i23 IGBT chips for improved performance and reliability
· Domestic IGBT and diode chip set designed by a highly experienced R&D team
· Co-developed i23 and d23 chips offer optimized performance compatibility and enhanced reliability when integrated into power modules
· 1500V Centralized PV Inverters
· Centralized Energy Storage Converters
· Electric Drive Systems for Commercial Vehicles
· Industrial Inverters
· Inverter Welding Machines
· Auxiliary Power Supplies for Railway Traction
· High Power Supplies, such as UPS systems
· Frequency Conversion Power Supplies
The i23 series micro-pattern trench IGBT chips (1200V and 1700V classes) are now in mass production.
We welcome customers to visit https://www.swiss-sem.com/ for more information or sample requests.
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