Release Date: August 28, 2025

The i20 series 1200V 200A / 300A IGBT modules adopt a proven ST-case half-bridge topology, featuring excellent thermal cycling capability. By enabling an operating junction temperature of up to 175 °C, the modules significantly enhance power density, offering greater flexibility in thermal management design.

Equipped with i20 fine-trench gate IGBT chips, the modules achieve extremely high current density with ultra-low power losses, ensuring outstanding system reliability. Their symmetrical current loop design minimizes parasitic parameters and optimizes switching performance, while the highly symmetrical parallel circuit design ensures superior current sharing capability.

Product Models

· SISD0200ST120i20_A01

· SISD0300ST120i20_A01

Key Features

· i20 ultra-low loss fine-trench gate IGBT chip technology

· Enhanced Al₂O₃ insulated ceramic substrates

· Low thermal resistance copper baseplate

· Optimized industry-standard package, significantly reducing internal impedance and terminal temperature rise

Competitive Advantages

· Optimized domestic IGBT and diode chipsets leveraging decades of power semiconductor R&D expertise

· High robustness and excellent short-circuit withstand capability for enhanced system safety

· Optimized switching performance, reducing power consumption in high-frequency applications

· High power density output, ideal for compact system designs

· Comprehensive traceability-based quality management

Applications

· Uninterruptible Power Supply (UPS)

· Industrial Variable Frequency Drives (VFD)

· Welding Equipment

· Power Supplies

The 1200V 200A / 300A ST-case half-bridge IGBT modules are now in mass production. For more details or sample requests, please visit Swiss-Sem at https://www.swiss-sem.com/.