The i23 1700V 900A series IGBT module adopts the classic ED package and incorporates i23 chips featuring micro-pattern trench gate technology, achieving ultra-low switching losses (Eon + Eoff) while delivering high short-circuit ruggedness to address challenges posed by high current density. The module supports a maximum continuous operating junction temperature of 175°C (Tvjop) and integrates an NTC temperature sensor, ensuring stable performance under high-temperature conditions. This significantly enhances device output capability, boosts system power density, and provides breakthrough solutions for wind power, industrial control, and new energy applications.

Product Model
SISD0900ED170i23

Key Features

· i23 ultra-low-loss micro-pattern trench gate IGBT chipset

· Reinforced Al₂O₃ insulated ceramic substrate

· Low thermal resistance copper baseplate

· Optimized industry-standard package, significantly reducing internal impedance and terminal temperature rise

Competitive Advantages

· Proprietary IGBT and diode chipset optimized through years of power semiconductor R&D experience

· 900A high-current power module design: copper wire bonding + large-area power terminal optimization for enhanced current handling and heat dissipation

· Single module supporting 900A high current output, simplifying system design and lowering total system cost

· Cross-industry high-performance solutions adaptable to diverse application scenarios

· Robust manufacturing and quality assurance system, ensuring business continuity

Application Fields

· Wind Power Generation

· Industrial Control

· Static Var Generator (SVG)

· Medium-Voltage Drives

· Medium-Voltage Cascaded Energy Storage

· Railway Traction

· Power Quality Systems

The 1700V 900A i23 ED Package Half-Bridge IGBT Module is now in mass production.
For more details or sample requests, please visit SwissSEM at https://www.swiss-sem.com/.