The i20 series TF modules adopt the industry-standard 34mm package and are available in 1700V 75A, 100A, and 150A ratings. Through optimized design, the series significantly enhances solder layer stability and process controllability, thereby improving temperature cycling reliability. The unique symmetrical chip layout ensures high consistency between the upper and lower bridge switch characteristics, effectively reducing parasitic inductance and capacitance while optimizing switching performance. These innovations collectively enhance system reliability and significantly boost the market competitiveness of end products.

Product Models

· SISD0075TF170i20

· SISD0100TF170i20

· SISD0150TF170i20

Key Features

· i20 ultra-low loss fine trench gate IGBT chip set

· High-efficiency Al₂O₃ insulated ceramic substrate

· Low thermal resistance copper baseplate

· Industry-standard package design

Competitive Advantages

· IGBT and diode chipsets developed by an experienced domestic R&D team

· Proven half-bridge topology design with high power density

· Tvj(op) up to 175°C under overload conditions

· Reduced system complexity and improved overall efficiency

· Comprehensive support for production, quality, and business continuity

Applications

· Static Var Generators (SVG)

· High-voltage inverters

· High-voltage cascaded energy storage systems

The 1700V i20 TF package half-bridge IGBT modules are now in mass production. We welcome customers to visit Swiss-Sem at https://www.swiss-sem.com for detailed information or sample requests.