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New Product Launch | 150V Platform Shielded Gate Trench (SGT) MOSFET Products

Date: 2026-01-29

With the ever-increasing demand for high-efficiency and high-reliability power devices in electric drive systems and battery management systems (BMS) for new energy vehicles, power semiconductor technology is facing a new round of innovation. To meet the urgent market demand for solutions with lower loss and higher power density, Hong'an Microelectronics, a subsidiary of Sun.King Technology, has launched its first-generation 150V platform shielded gate trench (SGT) MOSFET product - HAG040TN15. With an ultra-low on-resistance of 3.2mΩ and a powerful current capacity of 230A, this product has become a performance benchmark in high-end BMS, electric drive, and DC-DC conversion applications.


Product core parameters

Key Parameters
Specification Indicators
Technical platform
150V SGT G1
BVDSSMin. 150V
RDS(on)Max. 4.0mΩ
RthjcMax. 0.26℃/W
IDSilicon capability limit 230A
Packaging formTOLL


Core features of the product

1. Extreme low-resistance design

This 150V platform product utilizes advanced shielding gate trench technology, achieving an industry-leading specific on-resistance of 75mΩ*mm2 at a voltage level of 150V. For a 3.2mΩ product, the number of 8-inch wafer particles can reach up to 950. This means a significant reduction in conduction loss at the same current, directly improving the overall system efficiency and reducing temperature rise.

2. Adopt advanced packaging technology

This product utilizes TOLL's advanced packaging technology. By optimizing the packaging process, the typical value of junction-to-case thermal resistance (Rthjc) is as low as 0.21°C/W. The advanced packaging technology provides excellent heat dissipation channels for the product, thereby enhancing the power output capability of the device.

3. Extraordinary current-carrying capacity

At a case temperature of 25°C, the continuous drain current reaches up to 230A, and the pulse current capability even surpasses 978A. Its robust current handling capacity enables it to gracefully handle instantaneous high-current surges in scenarios such as electric drive startup and BMS main circuit switching, thereby doubling the system's reliability and robustness.

4. Precise focus on applications

The ultra-low on-resistance brings significant advantages in static performance. In the bus voltage short-circuit withstand test with VCC=120V, the short-circuit duration can reach 9μs. This provides performance support for BMS (Battery Management System) and motor drive fields, which have stringent requirements for static loss and on-state capability.


Typical applications of the product

  • BMS

  • Motor drive

  • DC-DC converter

  • Synchronous rectification SR

  • Uninterruptible Power Supply (UPS)

  • MPPT conversion of photovoltaic panel



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