2026-04-14
SwissSEM China Launches 2300V SiC MOSFET to Drive 800V DC Data Center Architecture Transformation
Shenzhen, April 10, 2026 — At the 800VDC Data Center Energy Transformation · Energy Storage & Wide Bandgap Semiconductor Synergy Forum, Nick Schneider, Head of R&D at SwissSEM China, delivered a keynote presentation titled “2300V SiC MOSFET Technology Solution for Solid-State Transformers”, officially unveiling a 2300V silicon carbide power device solution designed for next-generation data center power systems.









