On September 24, 2025, PCIM Asia 2025, the Shanghai International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management, opened grandly in Shanghai. As the most influential power semiconductor event in the Asia-Pacific region, the exhibition brought together leading global companies and top industry experts. Sun.King Technology, under the theme of “Innovation-Driven, Green Future”, showcased its latest R&D achievements and a wide range of self-developed core products, highlighting its technological strength and innovation capabilities in the fields of power semiconductors and power electronics.

During the exhibition, Sun.King Semiconductor presented a comprehensive product portfolio covering IGBT and SiC chips and modules. These included HEEV-packaged SiC modules for new energy vehicles and ED-packaged IGBT modules for industrial control, all developed to address the industry’s growing demand for efficiency, reliability, and miniaturization. The booth quickly became one of the main attractions, drawing dozens of inquiries from new energy vehicle manufacturers, energy storage companies, and industrial equipment makers eager to learn more about product performance and potential cooperation.

At the concurrent conference, Mr. Bo Wang, Deputy Manager of the Marketing Department at Sun.King Semiconductor, delivered a speech titled “Application Analysis of the New Generation i23 Series IGBT in the New Energy Sector.” He introduced the i23 series in detail, covering chip design, module design, and reliability. Compared with the previous i20 series and other industry products, the i23 series achieves VCEsat as low as 1.85V under 175°C operation, with Eon and Eoff at 152mJ and 135mJ respectively, significantly reducing overall losses. The diode, optimized through proton implantation technology, achieves a much lower forward voltage without increasing switching losses, while improving softness—making it more suitable for high stray inductance environments.

In addition, Dr. Paula Reigosa Diaz, R&D expert at Sun.King Semiconductor, gave a presentation titled “Impact of P-well Contact on Dynamic Losses in Scaled 1.2 kV SiC MOSFETs for Parallel Switching Applications,” sharing the company’s latest technological breakthroughs in silicon carbide devices.